Comment on ’’Cathodoluminescence studies of anomalous ion implantation defect introduction in ZnTe’’
- 1 July 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (7) , 4860
- https://doi.org/10.1063/1.329286
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Irradiation induced radiative centres in ZnTeSolid State Communications, 1980
- Cathodoluminescence studies of anomalous ion implantation defect introduction in ZnTeJournal of Applied Physics, 1980
- Optical identification of substitutional acceptors in refined ZnTePhysica Status Solidi (b), 1979
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978
- Anomalous penetration of implanted 65Zn and compensated zone build-up in ZnTe crystalsPhysics Letters A, 1976
- Ion implantation in ZnTe: Defect generation, migration and annealingRadiation Effects, 1976