Wannier–Stark localization in a strained InGaAs/GaAs superlattice

12 November 1990

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 57 (20) , 2116-2117
https://doi.org/10.1063/1.103915

Abstract

We report the first room‐temperature observation of Wannier–Stark localization in a strained InGaAs/GaAs superlattice. The localization effects are in close agreement to theory. At low electric fields, the room‐temperature absorption data show a small Wannier exciton peak at the lower edge of the miniband, and a more prominent M₁ exciton at higher energy. At higher fields, the miniband localizes to a single quantum well exciton with accompanying +1 and −1 transitions. At even higher fields the initial blue shift of the Wannier exciton changes to a Stark effect red shift with a Δα/α of about 3.

Keywords

This publication has 9 references indexed in Scilit:

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