Room-temperature two-dimension exciton exchange and blue shift of absorption edge in GaAs/AlGaAs superlattices under an electric field

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Abstract
The first room‐temperature two‐dimensional heavy hole exciton red shift, greater than 25 meV due to the exchange of Van Hove‐type M1 and quantum well excitons, was observed by photocurrent measurements in molecular beam epitaxy grown superlattices with periods of 30 Å GaAs/25 Å Ga0.5Al0.5As. At a photon energy of 1.66 eV, a 3000 cm−1 absorption change due to the blue shift of the superlattice absorption edge was also observed at room temperature in superlattices with periods of 20 Å GaAs/20 Å Ga0.5Al0.5As.