Effect of Incident Light Illumination Shape on Responsivity of GaAs MESFET Photodetector
- 1 May 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (5A) , L367
- https://doi.org/10.1143/jjap.24.l367
Abstract
Photoresponsivity of a GaAs MESFET is investigated. By matching the incident light illumination shape to the electrode shape of the device, an improvement of a factor ∼3 in the photoresponsivity was observed. This suggests that the photoresponsivity of GaAs MESFET's is substantially due to a channel current caused by a direct optically-induced modulation of depletion layer.Keywords
This publication has 7 references indexed in Scilit:
- Optical Control of GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1983
- Ultrahigh speed modulation-doped heterostructure field-effect photodetectorsApplied Physics Letters, 1983
- An intensity/phase autocorrelator for the use of ultrashort optical pulse measurementsOptics Communications, 1981
- Comments on “High Speed Photoresponse Mechanism of a GaAs-MESFET”Japanese Journal of Applied Physics, 1980
- An integrated photoconductive detector and waveguide structureApplied Physics Letters, 1980
- High Speed Photoresponse Mechanism of a GaAs-MESFETJapanese Journal of Applied Physics, 1980
- Broadband (7–18 GHz) 10 dB overlay coupler for m.i.c. applicationElectronics Letters, 1975