Giant focusing peak and potential dependence observed in a transition from axial to planar channeling in Si
- 1 April 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 67 (1-4) , 185-188
- https://doi.org/10.1016/0168-583x(92)95798-v
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Asymmetry in channeling spectra for the 〈110〉 angular scan in GaPNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Lattice site location of Te in GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Surface studies ofcompound semiconductors by ion channelingPhysical Review B, 1989
- Computer simulation of channeling in single crystalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Breakthrough angles for planar channeled protons in silicon and diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Interplanar potentials derived from transverse oscillations of 3.5-MeV/amu He and Li nuclei in planar channels of siliconPhysical Review B, 1982
- Transverse plane trajectory focusing in axial channelling I: Theory and comparison with computer simulationsRadiation Effects, 1981
- Transverse plane trajectory focusing in axial channellingzRadiation Effects, 1981
- Measurements of the ratio between planar and random stopping power for 80 to 300 keV protons in siliconPhysica Status Solidi (a), 1980
- Potential and stopping-power information from planar-channeling oscillationsPhysical Review B, 1979