Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon Films
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11B) , L1924
- https://doi.org/10.1143/jjap.30.l1924
Abstract
This letter describes a new process for realization of polysilicon thin-film transitors (TFT) on glass substrates. The process is based on crystallization by rapid thermal annealing of amorphous silicon films deposited by low-pressure chemical vapor deposition (LPCVD). With this technique, the time of crystallization of the silicon films is reduced to a few seconds. Thin-film transistors have been realized using this process, and the field-effect mobility is in the range of 20 cm2·V-1·s-1.Keywords
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