Cl2 chemical dry etching of GaAs under high vacuum conditions—Crystallographic etching and its mechanism
- 1 February 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (2) , 201-208
- https://doi.org/10.1007/bf02651746
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983
- Vapor phase equilibria in the systems In-InCl3 and Ga-GaCl3Journal of Crystal Growth, 1975
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