Simple ‘reconciliation’ MOSFETmodel valid in all regions

16 March 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (6) , 506-508
https://doi.org/10.1049/el:19950256

Abstract

A single-expression MOSFET model is proposed. The model is related to a recently published one, but includes explicitly the threshold voltage at any value of the source-substrate bias. Very good accuracy in all regions, including moderate inversion, is demonstrated. The model reduces to well established expressions in particular regions.

Keywords

This publication has 6 references indexed in Scilit:

PCIM: a physically based continuous short-channel IGFET model for circuit simulation
IEEE Transactions on Electron Devices, 1994
MOSFET modeling for analog circuit CAD: problems and prospects
IEEE Journal of Solid-State Circuits, 1994
A single-piece C/sub infinity /-continuous MOSFET model including subthreshold conduction
IEEE Electron Device Letters, 1991
Ion Implanted MOS Transistors
Published by Springer Nature ,1977
An accurate large-signal MOS transistor model for use in computer-aided design
IEEE Transactions on Electron Devices, 1972
Ion-implanted complementary MOS transistors in low-voltage circuits
IEEE Journal of Solid-State Circuits, 1972