Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy

This publication has 6 references indexed in Scilit:

• RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surface
  Journal of Crystal Growth, 1987
• Lattice relaxation of InAs heteroepitaxy on GaAs
  Journal of Crystal Growth, 1987
• Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices
  Applied Physics Letters, 1986
• Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
  Japanese Journal of Applied Physics, 1986
• Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillations
  Superlattices and Microstructures, 1985
• ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}-{\mathrm{In}}_y{\mathrm{Ga}}_{1-y}\mathrm{As}$ strained-layer superlattices: A proposal for useful, new electronic materials
  Physical Review B, 1983