Chemical vapor deposition of silicon using a CO2 laser
- 15 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (4) , 254-256
- https://doi.org/10.1063/1.90010
Abstract
Chemical vapor deposition of polycrystalline silicon is reported in which a CO2 laser is used for substrate heating. With this technique, deposition can be spatially limited to only a small portion of the substrate, and a spatial resolution of 50 μ is demonstrated. Since the reaction chamber and majority of the substrate are at much lower temperatures, premature gas phase reactions and substrate etching are avoided.Keywords
This publication has 4 references indexed in Scilit:
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- Infrared Lattice Bands of QuartzPhysical Review B, 1961
- The Vibration-Rotation Spectrum of SiPhysical Review B, 1942