Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9A) , L1778-1779
- https://doi.org/10.1143/jjap.27.l1778
Abstract
Structural uniformity and processing-related material degradation are two major problems in the fabrication of nanostructure devices. Anisotropic wet etching by using a mixed solution of ethylenediamine/water/pyrocatechol is successfully applied to the fabrication of ultrasmall structure of Si. It has been found that anisotropic wet etching eliminates the structural fluctuations by virtue of the inherent crystallographic nature of Si. A 20 nm-wide structure with specular side walls has been obtained.Keywords
This publication has 2 references indexed in Scilit:
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- A Water-Amine-Complexing Agent System for Etching SiliconJournal of the Electrochemical Society, 1967