Atomic model for theEL2 defect in GaAs

Publisher Website
Google Scholar
Abstract
From an analysis of the electronic properties of the EL2 defect in its stable and metastable configurations, and of the optically or electrically stimulated transformation between these, we deduce atomic models for the two configurations. Our model of the stable configuration consists of a divacancy on one side of an As–on–Ga-site antisite defect. For the metastable configuration we propose that the antisite separates the two vacancies. We show that this model fits the electrical and optical observations in detail. We note that the model is also in accord with thermodynamic determinations and existent positron-annihilation data. We propose a test for the model by an additional positron experiment.