Polarization reversal and film structure in ferroelectric Bi4Ti3O12 films deposited on silicon

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Abstract
A study has been made of the film structure and polarization reversal in ferroelectric bismuth titanate films deposited on silicon. Most films exhibited a fiber-textured c-axis (001) orientation. The structure of the films appeared not to depend on the orientation, resistivity, or conductivity type but on the surface conditions of the silicon substrate. The study on the polarization reversal of the films using the metal-ferroelectric-semiconductor structure yielded spontaneous polarization of 5.7 μC/cm2. The coercive field was about 130 kV/cm. An anomalous kink was observed on some hysteresis loops and the physical mechanism associated with this unusual phenomenon is attributed to the minority carrier of the silicon substrate.