Effects ofdbands on semiconductorspHamiltonians
- 15 December 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (18) , 12346-12352
- https://doi.org/10.1103/physrevb.40.12346
Abstract
The effects of Mn d electrons on the appropriate description of band-edge states in II-VI diluted magnetic semiconductors (DMS) is examined. In the absence of a magnetic field, such states are reasonably described by an ‘‘effective’’ sp band k⋅p Hamiltonian with matrix elements which include the effects of sp-d hybridization. At k=0, the addition of a nonzero-spin polarization leads to an effective sp Hamiltonian with the same form as that of the usual mean-field exchange Hamiltonian for DMS. The consistency of the explicit relationships derived here between microscopic and effective parameters is demonstrated for the case of Te. Both the electron and light-hole effective masses in this system are predicted to increase because of sp-d hybridization.
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