Comments on "Threshold voltage model for deep-submicrometer MOSFETs
- 1 September 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (9) , 1712
- https://doi.org/10.1109/16.405294
Abstract
For the original article see ibid., vol. 40, no. 1, p. 86-94 (1993). From the analytical solution of Poisson's equation in the depletion layer of a MOSFET in weak inversion, the commenter finds an exact expression of the threshold voltage, valid for all drain biases and channel lengths (if they are greater than the minimum acceptable value) using the same procedure as in the aforementioned paper by Z.-H. Liu et al.Keywords
This publication has 1 reference indexed in Scilit:
- Threshold voltage model for deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1993