Threshold voltage model for deep-submicrometer MOSFETs
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (1) , 86-95
- https://doi.org/10.1109/16.249429
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Deep-submicrometer MOS device fabrication using a photoresist-ashing techniqueIEEE Electron Device Letters, 1988
- A two-dimensional analytical threshold voltage model for MOSFET's with arbitrarily doped substratesIEEE Electron Device Letters, 1986
- Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET'sIEEE Electron Device Letters, 1984
- An analytical model for the channel electric field in MOSFET's with graded-drain structuresIEEE Electron Device Letters, 1984
- A simple method to determine channel widths for conventional and LDD MOSFET'sIEEE Electron Device Letters, 1984
- Generalized guide for MOSFET miniaturizationIEEE Electron Device Letters, 1980
- Threshold shifts due to nonuniform doping profiles in surface channel MOSFET'sIEEE Transactions on Electron Devices, 1979
- Analytical models of threshold voltage and breakdown voltage of short-channel MOSFETs derived from two-dimensional analysisIEEE Journal of Solid-State Circuits, 1979
- Subthreshold conduction in MOSFET'sIEEE Transactions on Electron Devices, 1978
- A simple two-dimensional model for IGFET operation in the saturation regionIEEE Transactions on Electron Devices, 1977