Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET's

1 November 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (11) , 443-446
https://doi.org/10.1109/EDL.1984.25981

Abstract

We present an analytical model of the threshold voltage of a short-channel MOSFET based on an explicit solution of two-dimensional Poisson's equation in the depletion region under the gate. This model predicts an exponential dependence on channel length (L), a linear dependence on drain voltage (VD), and an inverse dependence on oxide capacitance (εox/tox). An attractive feature of this model is that it provides an analytical closed-form expression for the threshold voltage as a function of material and device parameters (tox, VD, L, substrate bias, and substrate doping concentration) without making premature approximations. Also, this expression reduces to the corresponding expression for long-channel devices.

Keywords

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