Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs
- 27 October 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (17) , 2508-2510
- https://doi.org/10.1063/1.120115
Abstract
The authors demonstrate traveling wave photodetectors utilizing low-temperature-grown GaAs as the absorption layer. The electro-optically measured impulse response was found to exhibit a pulsewidth of 1.1 ps full width at half maximum, corresponding to a bandwidth of 370 GHz with an external quantum efficiency of 8% at 800 nm.
Keywords
This publication has 10 references indexed in Scilit:
- Velocity-matched distributed photodetectors with high-saturation power and large bandwidthIEEE Photonics Technology Letters, 1996
- 120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguideIEEE Photonics Technology Letters, 1995
- Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency productIEEE Photonics Technology Letters, 1995
- Novel GaAs photodetector with gain for long wavelength detectionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Photomixing up to 3.8 THz in low-temperature-grown GaAsApplied Physics Letters, 1995
- Optical-heterodyne generation in low-temperature-grown GaAs up to 1.2 THzPublished by SPIE-Intl Soc Optical Eng ,1994
- Nanoscale tera-hertz metal-semiconductor-metal photodetectorsIEEE Journal of Quantum Electronics, 1992
- 375-GHz-bandwidth photoconductive detectorApplied Physics Letters, 1991
- Evading the top-quark mass bound at the Fermilab Tevatron: New signals for the top quarkPhysical Review Letters, 1991
- Subpicosecond electrooptic sampling: Principles and applicationsIEEE Journal of Quantum Electronics, 1986