120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguide
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (12) , 1477-1479
- https://doi.org/10.1109/68.477288
Abstract
We demonstrate a long-wavelength detector structure using an undercut mesa and an air-bridged coplanar metal waveguide to significantly reduce both the diode RC constant and the parasitic capacitance. Record electrical bandwidths of 120 GHz are demonstrated for long-wavelength photodetectors.Keywords
This publication has 9 references indexed in Scilit:
- 110-GHz GaInAs/InP double heterostructure p-i-n photodetectorsJournal of Lightwave Technology, 1995
- Resonant-cavity-enhanced pin photodetector with 17 GHzbandwidth-efficiency productElectronics Letters, 1994
- High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectorsIEEE Photonics Technology Letters, 1994
- 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelengthIEEE Photonics Technology Letters, 1994
- Mesa-isolated GaAs Schottky-barrier photodiodesElectronics Letters, 1992
- Enhancement of quantum efficiency in thin photodiodes through absorptive resonanceJournal of Lightwave Technology, 1991
- Resonant cavity-enhanced (RCE) photodetectorsIEEE Journal of Quantum Electronics, 1991
- Picosecond optical sampling of GaAs integrated circuitsIEEE Journal of Quantum Electronics, 1988
- Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0–1.7 μmElectronics Letters, 1985