GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitors
- 1 February 1995
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 7 (1-4) , 45-60
- https://doi.org/10.1080/10584589508220220
Abstract
GaAs microwave monolithic integrated circuits (MMICs) with Ba1−XSrXTiO3 (BST) capacitors have been developed. Spin-coating of sol-gel solution was used to make the BST thin film. The obtained BST film has a dielectric constant of 300 that is 50 times higher than the conventional SiN one. The capacitance has the frequency roll-off over 2 GHz, which is sufficient enough for a variety of consumer applications. The implemented GaAs MMICs with on-chip BST capacitors enable the positive-bias supply and high gain performance as well as the small package outline.Keywords
This publication has 5 references indexed in Scilit:
- A GaAs high-power RF single-pole double-throw switch IC for digital mobile communication systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A GaAs MMIC chip-set for mobile communications using on-chip ferroelectric capacitorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Preparation and properties of (Ba, Sr)TiO3 single crystalsMaterials Research Bulletin, 1971
- Structural Behavior in the System (Ba, Ca, Sr) TiO3 and Its Relation to Certain Dielectric CharacteristicsJournal of the American Ceramic Society, 1955
- Dispersion and Absorption in Dielectrics I. Alternating Current CharacteristicsThe Journal of Chemical Physics, 1941