Excimer laser reactive ablation deposition of silicon nitride films
- 1 February 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 86 (1-4) , 170-174
- https://doi.org/10.1016/0169-4332(94)00375-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Deposition of SiO2 by reactive excimer laser ablation from a SiO targetApplied Surface Science, 1990
- IR transmittance studies of hydrogen-free and hydrogenated silicon nitride and silicon oxynitride films deposited by reactive sputteringThin Solid Films, 1987
- Characteristics of Thermal Silicon Nitride Films Grown in Argon‐Diluted AmmoniaJournal of the Electrochemical Society, 1987
- The electrophysical properties of silicon nitride at low temperaturesJournal of Applied Physics, 1987