The effects of photo-assisted MOCVD on the doping of Na acceptors into ZnS epitaxial layers
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 649-652
- https://doi.org/10.1016/0022-0248(91)90535-d
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Growth of ZnS epitaxial layers by photo-assisted MOCVD method and Na-acceptor impurity related emission properties.Hyomen Kagaku, 1990
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- Photo-assisted chemical beam epitaxy of GaAsJournal of Crystal Growth, 1989
- Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnSJournal of Crystal Growth, 1988