Properties of undoped and Sb-doped CdTe surfaces prepared by conventional and photo-assisted molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 543-546
- https://doi.org/10.1016/0022-0248(89)90462-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Surface nuvleation kinetics of molecular beam epitaxial doped (001) and (111) CdTeJournal of Crystal Growth, 1988
- Controlled substitutional doping of CdTe thin films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1987
- p-type CdTe epilayers grown by photoassisted molecular beam epitaxyApplied Physics Letters, 1986
- Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfacesApplied Physics Letters, 1986