The electrical properties of vapour epitaxial indium phosphide grown in the presence of oxygen
- 1 April 1979
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 46 (4) , 582-584
- https://doi.org/10.1016/0022-0248(79)90049-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A study of the molar fraction effect in the PCl3-In-H2 systemJournal of Crystal Growth, 1974
- Measurement of carrier-concentration profiles in epitaxial indium phosphideElectronics Letters, 1973
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- The preparation of high purity epitaxial InPSolid State Communications, 1970