XPS Studies of a-Si1-xCx:H Prepared from C2H4/SiH4 Gas Mixtures
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4A) , L663
- https://doi.org/10.1143/jjap.29.l663
Abstract
Hydrogenated amorphous silicon carbon alloy films (a-Si1-x C x :H) with optical band gap 2.4 eV and x=0.5, deposited in a radio frequency (13.56 MHz) plasma of H2/C2H4/SiH4 gases have been examined using X-ray photoelectron spectroscopy (XPS). From the Cls and Si2p core level spectra it was found that films grown using a smaller SiH4/C2H4 ratio had a larger concentration of Si-C bonds. Further, spectrum shifts caused by slight Ar sputtering of as-deposited films suggested that the formation of Si-C bond occurs at the surfaces. Finally, valence band spectra showed that films with high Si-C bond density had a steep valence band edge typical of high quality films.Keywords
This publication has 5 references indexed in Scilit:
- The role of hydrogen dilution in deposition of a-SiC:H from silane/ethylene mixturesJournal of Applied Physics, 1990
- Amorphous silicon solar cells with ethylene-based p+ layersApplied Physics Letters, 1989
- Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasma-zone apparatusJournal of Applied Physics, 1989
- Preparation of highly photosensitive hydrogenated amorphous Si-C alloys from a glow-discharge plasmaJournal of Applied Physics, 1986
- Valence band structure of hydrogenated amorphous silicon-carbon alloysJournal of Non-Crystalline Solids, 1983