Electronic structure of oxygen-doped gallium arsenide
- 28 November 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (22) , L831-L834
- https://doi.org/10.1088/0022-3719/12/22/002
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Multiple scattering-Xα cluster model of GaAs: electronic states of isolated vacancies and substitutional impuritiesJournal of Physics C: Solid State Physics, 1979
- A molecular cluster model of the electronic structure of IV and III-V covalent semiconductors: Application to GaAsJournal of Physics C: Solid State Physics, 1979
- Measurements on the Dember effect in the relaxation semiconductors GaAs: O and GaAs: CrPhysics Letters A, 1979
- Quantum ChemistryAnnual Review of Physical Chemistry, 1975
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975
- Photocapacitance studies in high-purity GaAsPhysica Status Solidi (a), 1974
- Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in DiamondPhysical Review B, 1973
- Optimization of the Statistical Exchange Parameterfor the Free Atoms H through NbPhysical Review B, 1972
- Trapping analysis in gallium arsenideSolid State Communications, 1968
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961