Double-Gate MOSFETs: Is Gate Alignment Mandatory?

Publisher Website

1 January 2001

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 267-270
https://doi.org/10.1109/essderc.2001.195252

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Silicon-on-Insulator Technology: Materials to VLSI
Published by Springer Nature ,1997
Fully depleted dual-gated thin-film SOI P-MOSFETs fabricated in SOI islands with an isolated buried polysilicon backgate
IEEE Electron Device Letters, 1996