Fully depleted dual-gated thin-film SOI P-MOSFETs fabricated in SOI islands with an isolated buried polysilicon backgate
- 1 November 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (11) , 509-511
- https://doi.org/10.1109/55.541764
Abstract
P-channel dual-gated thin-film silicon-on-insulator (DG-TFSOI) MOSFETs have been fabricated with an isolated buried polysilicon backgate in an SOI island formed by epitaxial lateral overgrowth (ELO) of silicon. This structure allows individual operation of both the top and back gates rather than the conventional common backgate structure. When fully-depleted, the buried gate is used to individually shift the top gate threshold voltage (V/sub T/). A linear shift of /spl Delta/V/sub T,top///spl Delta/V/sub G,back/ of 0.5 V/V was achieved with a thin buried oxide. The effective density of interface traps (D/sub it/) for the backgate polysilicon-oxide SOI interface was measured to be 1.8/spl times/10/sup 11/ #/cm/sup 2//spl middot/eV as compared to the substrate-oxide of 1.1/spl times/10/sup 11/ #/cm/sup 2//spl middot/eV.Keywords
This publication has 8 references indexed in Scilit:
- Fully depleted dual-gated thin-film SOI p-MOSFET with an isolated buried polysilicon backgatePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Back gated CMOS on SOIAS for dynamic threshold voltage controlPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low defect planar SOI islands adjacent to selective epitaxial growth (SEG)Microelectronic Engineering, 1995
- Ultrafast operation of V/sub th/-adjusted p/sup +/-n/sup +/ double-gate SOI MOSFET'sIEEE Electron Device Letters, 1994
- Measurement and modeling of self-heating in SOI nMOSFET'sIEEE Transactions on Electron Devices, 1994
- Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage methodSolid-State Electronics, 1993
- Fully planar method for creating adjacent ‘‘self-isolating’’ silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowthApplied Physics Letters, 1992
- Subthreshold slope in thin-film SOI MOSFETsIEEE Transactions on Electron Devices, 1990