Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage method
- 31 May 1993
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (5) , 801-802
- https://doi.org/10.1016/0038-1101(93)90254-n
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping techniqueIEEE Transactions on Electron Devices, 1989
- Moderate inversion in MOS devicesSolid-State Electronics, 1982