Measurements of interface state density in partially- and fully-depleted silicon-on-insulator MOSFETs by a high-low-frequency transconductance method

This publication has 8 references indexed in Scilit:

• Determination of interface state density in small-geometry MOSFETs by high-low-frequency transconductance method
  IEEE Electron Device Letters, 1991
• Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
  IEEE Transactions on Electron Devices, 1989
• Static and dynamic transconductance of MOSFETs
  IEEE Transactions on Electron Devices, 1989
• Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation
  Solid-State Electronics, 1988
• The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuits
  IEEE Transactions on Nuclear Science, 1988
• Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials
  IEEE Electron Device Letters, 1988
• An analytical model of conductance and transconductance for enhanced-mode mosfets
  Physica Status Solidi (a), 1986
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984