Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (1) , 35-37
- https://doi.org/10.1109/55.20405
Abstract
The dynamic transconductance method is generalized for depletion-mode transistors (DMTs) and used to characterize the interface trapping properties and film doping on silicon-on-insulator (SOI) structures. This method is based on an analytical model of the transconductance for static, dynamic, and high-frequency operation in the linear region.Keywords
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