Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures
- 6 January 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (1) , 50-52
- https://doi.org/10.1063/1.96759
Abstract
A technique equivalent to the conventional C(V) measurement is developed for silicon‐on‐insulator technology. A depletion mode transistor is used. The ID(VG) characteristic and its derivative, i.e., the transconductance, allow the determination of the doping of the Si film, the oxide thickness, the fixed oxide charge at both Si/SiO2 interfaces. The device can be used in process control without any extra process steps.Keywords
This publication has 5 references indexed in Scilit:
- Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistorApplied Physics Letters, 1985
- Electrical properties of halogen lamp recrystallized silicon films on SiO2Journal of Applied Physics, 1984
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982
- Theory of the fully depleted SOS/MOS transistorSolid-State Electronics, 1980