Electrical properties of halogen lamp recrystallized silicon films on SiO2

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Abstract
The electrical properties of halogen lamp recrystallized silicon films on oxide‐coated Si substrates have been investigated by capacitance technique and transport measurements. Bulk and interface defect densities revealed by deep level transient spectroscopy are lower than 5×1011 cm−3 and 1010 eV−1 cm−2, respectively. However, the generation lifetimes on the order of 0.1 μs, obtained from pulsed metal‐oxide‐semiconductor (MOS) capacitor techniques, cannot be accounted for by bulk or surface generation, given the very low defect densities observed. The source of defects may be the subgrain boundaries. Electron mobility measured from depletion‐mode MOS transistors ( μ=700 cm2/V s) is comparable to that obtainable in bulk‐type material. Subgrain boundaries do not appear to have a significant effect on carrier transport.