Interpretation of surface and bulk effects using the pulsed MIS capacitor
- 31 December 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (12) , 1285-1297
- https://doi.org/10.1016/0038-1101(71)90118-3
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- Measuring the lifetime of minority carriers in MIS structuresSolid-State Electronics, 1969
- Minority Carrier Lifetime from the Transient Response of Thin Se‐Ge LayersPhysica Status Solidi (b), 1969
- Different mechanisms affecting the inversion layer transient responseIEEE Transactions on Electron Devices, 1968
- Minority carrier lifetime measurement in gold doped silicon MOS structuresSurface Science, 1968
- Zu Relaxationseffekten bei epitaktischen Si-MOS-StrukturenPhysica Status Solidi (b), 1968
- Experimental study of semiconductor surface conductivitySurface Science, 1966
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966
- Energy Levels in Neutron-Irradiated-Type SiliconPhysical Review B, 1959
- Measurement of Germanium Surface States by Pulsed Channel EffectPhysical Review B, 1958