Minority Carrier Lifetime from the Transient Response of Thin Se‐Ge Layers
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 32 (1) , K87-K88
- https://doi.org/10.1002/pssb.19690320174
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967
- Experimental study of semiconductor surface conductivitySurface Science, 1966
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966
- Successive Growth of Si and SiO[sub 2] in Epitaxial ApparatusJournal of the Electrochemical Society, 1964
- Some Properties of Germanium-Silicon AlloysPhysical Review B, 1954