Use of selective annealing for growing very large grain silicon on insulator films
- 15 August 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (4) , 346-347
- https://doi.org/10.1063/1.93507
Abstract
The selective annealing technique (laser annealing under a patterned antireflecting coating) has been successfully applied to the growth of very large (20×400 μm) silicon single crystals on SiO2. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.Keywords
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