The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuits
Open Access
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1350-1354
- https://doi.org/10.1109/23.25463
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealingJournal of Applied Physics, 1988
- Dislocation Reduction on Simox Substrates by Using Multiple ImplantsMRS Proceedings, 1987
- Transient Radiation Effects in SOI MemoriesIEEE Transactions on Nuclear Science, 1985
- SOI-CMOS 4K SRAM with high dose oxygen implanted substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972