Hole spin polarization in GaAlAs:Mn structures

Preprint

6 October 2000

preprint
Published by arXiv in arXiv

Abstract

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.

Keywords

CONSISTENT CALCULATION
ELECTRONIC PROPERTIES
SPIN POLARIZATION
MN STRUCTURES
SEMICONDUCTOR
MN MAGNETIC
HOLE SPIN
GAALAS

All Related Versions

Version 1, 2000-10-06, ArXiv
Version 2, 2001-01-29, ArXiv
Published version: Physical Review B, 63 (15), 153305.

This publication has 0 references indexed in Scilit: