Hole spin polarization inGa1−xAlxAs:Mnstructures

A self-consistent calculation of the electronic properties of ${\mathrm{Ga}}_{1-x}{\mathrm{Al}}_x\mathrm{As}:\mathrm{Mn}$ magnetic semiconductor quantum well structures is performed including the Hartree term and the $\mathrm{sp}-d$ exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. The available experimental results are compared with the theory.