“Silicide-like electron states in the Si-Mo interface grown at liquid nitrogen temperature”
- 30 November 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 52 (8) , 731-734
- https://doi.org/10.1016/0038-1098(84)90399-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Electronic structure of Cr silicides and Si-Cr interface reactionsPhysical Review B, 1983
- Interface catalytic effect: Cr at the Si(111)-Au interfacePhysical Review B, 1983
- The electron states in the Si(111)-Pd interface: Towards a reassessment of the experimental informationSurface Science, 1983
- Microscopic properties and behavior of silicide interfacesSurface Science, 1983
- Energy-dependent photoemission in the study of silicon-d metal interfacesThin Solid Films, 1983
- Chemical bonding at the Si–metal interface: Si–Ni and Si–CrJournal of Vacuum Science and Technology, 1982
- Structural morphology and electronic properties of the Si-Cr interfacePhysical Review B, 1982
- Copper on Ni(111): The electron states from submonolayer to several-monolayer coveragesPhysical Review B, 1981
- Stoichiometric and Structural Origin of Electronic States at theSi-Si InterfacePhysical Review Letters, 1981
- The Si(111)–Pd interface: Spectroscopic evidence of chemical processes at liquid nitrogen temperatureJournal of Vacuum Science and Technology, 1980