52.4L:Late‐News Paper:a‐Si:H TFT Active‐Matrix Phosphorescent OLED Pixel
- 1 May 2002
- journal article
- Published by Wiley in SID Symposium Digest of Technical Papers
- Vol. 33 (1) , 1368-1371
- https://doi.org/10.1889/1.1830201
Abstract
We report a two‐transistor amorphous silicon (a‐Si:H) thin film transistor (TFT) active‐matrix organic light emitting diode (OLED) pixel using high‐efficiency phosphorescent OLED devices. The gate to source voltage (VGS) for the OLED drive transistor is less than 8 V for a pixel brightness of 100 cd/m2and less than 12 V for 400 cd/m2. The low drive voltage is important for good TFT stability and display uniformity.This publication has 4 references indexed in Scilit:
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