1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (4) , 206-208
- https://doi.org/10.1109/55.992840
Abstract
In this letter, we present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-/spl mu/m channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a V/sub DS/=70 V, with a stable gain of 23 dB at V/sub DS/=50 V. At 3.2 GHz the power density is over 1 W/mm at V/sub DS/=50 V and 0.6 W/mm at V/sub DS/=28 V. These results are to our knowledge the best ever for silicon power MOSFETs.Keywords
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