Lasing in GaN microdisks pivoted on Si
Open Access
- 20 November 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (21) , 211101
- https://doi.org/10.1063/1.2392673
Abstract
Arrays of pivoted GaN microdisks have been fabricated on a material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. Raman spectroscopy reveals substantial strain relaxation in these structures. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities.
Keywords
This publication has 14 references indexed in Scilit:
- Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrateApplied Physics Letters, 2006
- Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflectorApplied Physics Letters, 2005
- Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etchingApplied Physics Letters, 2005
- Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracksJournal of Applied Physics, 2003
- Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)Journal of Applied Physics, 2002
- Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchbackApplied Physics Letters, 2001
- High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxyApplied Physics Letters, 2000
- Raman determination of phonon deformation potentials in α-GaNSolid State Communications, 1996
- Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substratesJournal of Applied Physics, 1994
- GaN grown on hydrogen plasma cleaned 6H-SiC substratesApplied Physics Letters, 1993