Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate
- 20 March 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (12) , 121114
- https://doi.org/10.1063/1.2188383
Abstract
We present GaN-based light emitting diodestructures on a Si(001) substrate. The 2.3 μ m thick, crack-free layers were grown by metalorganic vapor phase epitaxy using a high-temperature AlN seed layer and 4° off-oriented substrates. This allows us to grow a flat, fully coalesced, and single crystalline GaN layer on Si(001). For preventing crack formation, four AlN interlayers were inserted in the buffer structure. The optically active layers consist of five-fold In Ga N ∕ Ga N multiple quantum wells showing a bright electroluminescence at 490 nm at room temperature. The crystallographic structure was analyzed by x-ray diffraction measurements and the optical properties were determined by photo- and electroluminescence.Keywords
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