Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth

This publication has 6 references indexed in Scilit:

• Low temperature growth interface for growing Boron Monophosphide on Si substrates
  Applied Surface Science, 2000
• Growth of GaN on Si substrates using BP thin layer as a buffer
  Materials Science and Engineering: B, 2000
• Hole Compensation Mechanism of P-Type GaN Films
  Japanese Journal of Applied Physics, 1992
• Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
  Japanese Journal of Applied Physics, 1991
• Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
  Applied Physics Letters, 1991
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
  Japanese Journal of Applied Physics, 1989