Modeling of Irradiation-Induced Changes in the Electrical Properties of Metal-Oxide-Semiconductor Structures
- 1 January 1982
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- A study of oxide traps and interface states of the silicon-silicon dioxide interfaceJournal of Applied Physics, 1980
- Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressingJournal of Applied Physics, 1977
- A linear two-layer model for flat-band shift in irradiated MOS devicesSolid-State Electronics, 1976
- Hole traps in silicon dioxideJournal of Applied Physics, 1976
- The Beginnings of Metallurgy: A New LookScience, 1973
- Photoemission of Electrons from Metals into Silicon DioxideJournal of Applied Physics, 1966
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939
- ber die Quantenmechanik der Elektronen in KristallgitternThe European Physical Journal A, 1929
- Zur Elektronentheorie der Metalle auf Grund der Fermischen StatistikThe European Physical Journal A, 1928