A linear two-layer model for flat-band shift in irradiated MOS devices
- 30 April 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (4) , 291-296
- https://doi.org/10.1016/0038-1101(76)90025-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971
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- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- A model for radiation damage in metal-oxide-semiconductor structuresProceedings of the IEEE, 1966