Measured radiation effects in MOS capacitors with a proposed new model
- 15 May 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (10) , 464-466
- https://doi.org/10.1063/1.1655013
Abstract
Flat‐band shift measurements were made on p‐type MOS devices irradiated with electrons at various gate bias voltages. A reproducible curve of flat‐band shift versus gate bias was obtained that could not be readily accounted for with existing models. Data were taken over a wide range of negative and positive gate bias voltages. The model assumes that traps obey Fermi‐Dirac statistics, subject to interface boundary constraints. A linearized quasi‐Fermi level is assumed in the oxide. The resulting distribution of charged traps yields a self‐consistent energy band structure throughout the entire device.Keywords
This publication has 4 references indexed in Scilit:
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