A harmonic-balance-oriented modeling approach for microwave electron devices
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 345-348
- https://doi.org/10.1109/iedm.1991.235382
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A nonlinear integral model of electron devices for HB circuit analysisIEEE Transactions on Microwave Theory and Techniques, 1992
- Mathematical approach to large-signal modelling of electron devicesElectronics Letters, 1991
- Mathematical approaches to electron device modelling for non‐linear microwave circuit design: State of the art and present trendsEuropean Transactions on Telecommunications, 1990
- Measuring volterra kernels (II)International Journal of Circuit Theory and Applications, 1989
- Physical modeling of GaAs MESFETs in an integrated CAD environment: from device technology to microwave circuit performanceIEEE Transactions on Microwave Theory and Techniques, 1989
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988