Physical modeling of GaAs MESFETs in an integrated CAD environment: from device technology to microwave circuit performance
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (3) , 457-468
- https://doi.org/10.1109/22.21615
Abstract
The linkage between a physical device simulator for small- and large-signal characterization and CAD (computer-aided design) tools for both linear and nonlinear circuit analysis and design is considered. Efficient techniques for the physical DC and small-signal analysis of MESFETs are presented. The problem of physical simulation in a circuit environment is discussed, and it is shown how such a simulation makes possible small-signal models accounting for propagation and external parasitics. Efficient solutions for physical large-signal simulation, based on deriving large-signal equivalent circuits from small-signal analyses under different bias conditions, are proposed. The small- and large-signal characterizations allow physical simulation to be performed efficiently in a circuit environment. Examples and results are presenteKeywords
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